6.1 Consider an MOS capacitor with a p+ poly-Si gate (EF=Ev) and a p-type substrate with NA=10^16 cm^−3.tox=15 nm,ni=10^10 cm^−3,T=300K,Ks=11.7, Kox=3.9,EG( poly-Si )=EG(Si=1.12eV).
(a) Determine the flatband voltage VFB and the normalized flatband capacitance CFB/Cox
​(b) Determine VFB when the p+ poly-Si gate is replaced with an n+ poly-Xx gate (EF=Ec), where Xx is a semiconductor with electron affinity χ(Xx)=χ(Si), but with band gap EG(Xx)=EG(Si)/2.Qf=Qit=Qm=Qot=0.