Consider a step pn junction made of GaAs at T = 300 K. At zero bias, only 20% of the total depletion region width is in the p-side. The built-in potential ϕi​=1.20V.
acceptor density in the p-side = 5.68x10^16
donor density in the n-side = 1.42x10^16
Determine the depletion region width, xn​, in the n-side in unit of μm.